K4H281638B-TCB0000 Samsung Semiconductor, K4H281638B-TCB0000 Datasheet - Page 5

• Manufacturer Part Number: K4H281638B-TCB0000
• Manufacturer: Samsung Semiconductor

Specifications of K4H281638B-TCB0000

• Lead Free Status / Rohs Status: Supplier Unconfirmed

128Mb DDR SDRAM
Version 1.3(October,2001)
Version 1.31(November,2001)
- Modificated typo.
- Changed pin # 17 from NC to A13 in Package pinout.
- Revised "Write with autoprecharge" table in page 29.
- Added tIS and tPDEX parameters in "power down" timing of page 31.
- Revised "Absolute maximum rating" table in page 38.
- Revised AC parameter table
- Deleted tHZ/tLZ of DQS
. Changed "Voltage on VDDQ supply relative to VSS" value from -0.5~3.6V to -1~3.6V
. Changed "power dissipation" value from 1.0W to 1.5W.
tHZ(DQS)
tLZ(DQS)
tHZ(DQ)
tLZ(DQ)
tWPST
tPDEX
(tCK)
tACmin
tACmin
-400ps
-400ps
10ns
Min.
0.25
DDR266A
tACmax
tACmax
-400ps
-400ps
Max.
tACmin
tACmin
-400ps
-400ps
10ns
Min.
0.25
DDR266B
From
tACmax
tACmax
-400ps
-400ps
Max.
tACmin
tACmin
-400ps
-400ps
10ns
Min.
0.25
DDR200
- 5 -
tACmax
tACmax
-400ps
-400ps
Max.
-0.75
-0.75
-0.75
-0.75
7.5ns
Min.
0.4
DDR266A
+0.75
+0.75
+0.75
+0.75
Max.
0.6
REV. 1.31 Nov. 3. 2001
7.5ns
-0.75
-0.75
-0.75
-0.75
Min.
0.4
DDR266B
To
+0.75
+0.75
+0.75
+0.75
Max.
0.6
10ns
Min.
-0.8
-0.8
-0.8
-1.1
0.4
DDR200
Max.
+0.8
+0.8
+0.8
-0.8
0.6