K4H281638B-TCB0000 Samsung Semiconductor, K4H281638B-TCB0000 Datasheet - Page 8

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K4H281638B-TCB0000

Manufacturer Part Number
K4H281638B-TCB0000
Description
Manufacturer
Samsung Semiconductor
Datasheet

Specifications of K4H281638B-TCB0000

Lead Free Status / Rohs Status
Supplier Unconfirmed
128Mb DDR SDRAM
List of tables
Table 1 : Operating frequency and DLL jitter
Table 2. : Column address configurtion
Table 3 : Input/Output function description
Table 4 : Burst address ordering for burst length
Table 5 : Bank selection for precharge by bank address bits
Table 6 : Operating description when new command asserted while
Table 9-1 : Functional truth table
Table 9-2 : Functional truth table (contiued)
Table 7 : Operating description when new command asserted while
Table 8 : Command truth table
Table 9-3 : Functional truth table (contiued)
Table 9-4 : Functional truth table (contiued)
Table 9-5 : Functional truth table (cotinued)
Table 10 : Absolute maximum raings
Table 11 : DC operating condtion
Table 19 : Pull down and pull up current values(For normal strength driver)
Table 20 : Pull down and pull up current values(For half strength driver)
Table 12 : DC specification
Table 13 : AC operating condition
Table 14 : Overshoot/Undershoot specification for Address and Control Pins
Table 15 : Overshoot/Undershoot specification for Data Pins
Table 16 : AC timing parameters and specifications
Table 17 : AC operating test conditions
Table 18 : Input/Output capacitance
read with auto precharge is issued
write with auto precharge is issued
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REV. 1.31 Nov. 3. 2001

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