1MBH50D-060S Fuji Semiconductor, 1MBH50D-060S Datasheet - Page 2

• Manufacturer Part Number: 1MBH50D-060S
• Description: IGBT; IGBT+FWD; Molded; TO-3PL Case; 75A Collector; 230 W (Max.); 600V; +/-20V
• Manufacturer: Fuji Semiconductor
• Type: Moldedr

Specifications of 1MBH50D-060S

• Capacitance, Gate: 2500 pF
• Current, Collector: 75 A
• Package Type: TO-3PL
• Polarity: N-Channel
• Power Dissipation: 230 W
• Resistance, Thermal, Junction To Case: 0.54 °C/W
• Voltage, Collector To Emitter Shorted: 600 V
• Voltage, Collector To Emitter, Saturation: 2.4 V

1MBH50D-060S
Outline drawings, mm
Switching waveform (Inductance load)
Mesurement circuit
TO-3PL
Gate
Collector
Emitter
Molded IGBT