DSPIC30F4013-20E/P Microchip Technology Inc., DSPIC30F4013-20E/P Datasheet - Page 49

• Manufacturer Part Number: DSPIC30F4013-20E/P
• Description: 16 BIT MCU/DSP 40LD 20MIPS 48 KB FLASH
• Manufacturer: Microchip Technology Inc.
• Type: DSPr

Specifications of DSPIC30F4013-20E/P

• A/d Inputs: 13-Channels, 12-Bit
• Comparators: 4
• Cpu Speed: 30 MIPS
• Eeprom Memory: 1K Bytes
• Input Output: 30
• Interface: CAN, I2C/SPI/UART, USART
• Ios: 30
• Memory Type: Flash
• Number Of Bits: 16
• Package Type: 40-pin PDIP
• Programmable Memory: 48K Bytes
• Ram Size: 2K Bytes
• Timers: 5-16-bit, 2-32-bit
• Voltage, Range: 2.5-5.5
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

5.0
The dsPIC30F family of devices contains internal pro-
gram Flash memory for executing user code. There are
two methods by which the user can program this
memory:
1.
2.
5.1
dsPIC30F devices can be serially programmed while in
the end application circuit. This is simply done with two
lines for Programming Clock and Programming Data
(which are named PGC and PGD respectively), and
three other lines for Power (V
Master Clear (MCLR). This allows customers to manu-
facture boards with unprogrammed devices, and then
program the microcontroller just before shipping the
product. This also allows the most recent firmware or a
custom firmware to be programmed.
FIGURE 5-1:
© 2006 Microchip Technology Inc.
Note: This data sheet summarizes features of this group
of dsPIC30F devices and is not intended to be a complete
reference source. For more information on the CPU,
peripherals, register descriptions and general device
functionality, refer to the “ dsPIC30F Family Reference
Manual” (DS70046). For more information on the device
instruction set and programming, refer to the “ dsPIC30F/
33F Programmer’s Reference Manual” (DS70157).
Run-Time Self-Programming (RTSP)
In-Circuit Serial Programming™ (ICSP™)
FLASH PROGRAM MEMORY
In-Circuit Serial Programming
(ICSP)
User/Configuration
Space Select
ADDRESSING FOR TABLE AND NVM REGISTERS
Using
Program
Counter
Using
NVMADR
Addressing
Using
Table
Instruction
DD
), Ground (V
dsPIC30F2011/2012/3012/3013
1/0
1/0
0
SS
NVMADRU Reg
TBLPAG Reg
) and
8 bits
8 bits
Program Counter
24 bits
5.2
RTSP is accomplished using TBLRD (table read) and
TBLWT (table write) instructions.
With RTSP, the user may erase program memory, 32
instructions (96 bytes) at a time and can write program
memory data, 32 instructions (96 bytes) at a time.
5.3
The TBLRDL and the TBLWTL instructions are used to
read or write to bits<15:0> of program memory.
TBLRDL and TBLWTL can access program memory in
Word or Byte mode.
The TBLRDH and TBLWTH instructions are used to read
or write to bits<23:16> of program memory. TBLRDH
and TBLWTH can access program memory in Word or
Byte mode.
A 24-bit program memory address is formed using
bits<7:0> of the TBLPAG register and the Effective
Address (EA) from a W register specified in the table
instruction, as shown in Figure 5-1.
24-bit EA
NVMADR Reg EA
Working Reg EA
Run-Time Self-Programming
(RTSP)
Table Instruction Operation
Summary
16 bits
16 bits
Byte
Select
0
DS70139D-page 47