BLF6G21-10G NXP Semiconductors, BLF6G21-10G Datasheet - Page 2

• Manufacturer Part Number: BLF6G21-10G
• Description: LDMOS, RF, 10W, HF-2.2GHZ, SOT538A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G21-10G

• Transistor Type: N Channel
• Drain Source Voltage Vds: 65V
• Power Dissipation Pd: 10W
• No. Of Pins: 3
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G21-10G_2
Product data sheet
1.3 Applications
I
I
I
I
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
Type number
BLF6G21-10G
Symbol
V
V
T
T
stg
j
DS
GS
Excellent thermal stability
No internal matching for broadband operation
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and
multi carrier applications in the HF to 2200 MHz frequency range
Broadcast drivers
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Description
drain
gate
source
Package
Name
-
Rev. 02 — 11 December 2009
Description
ceramic surface-mounted package; 2 leads
Conditions
[1]
Simplified outline
BLF6G21-10G
2
1
Power LDMOS transistor
3
Min
-
-
0.5
65
Graphic symbol
© NXP B.V. 2009. All rights reserved.
Max
65
+13
+150
225
2
sym112
Version
SOT538A
1
3
Unit
V
V
C
C
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