BLF6G21-10G NXP Semiconductors, BLF6G21-10G Datasheet - Page 9

• Manufacturer Part Number: BLF6G21-10G
• Description: LDMOS, RF, 10W, HF-2.2GHZ, SOT538A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G21-10G

• Transistor Type: N Channel
• Drain Source Voltage Vds: 65V
• Power Dissipation Pd: 10W
• No. Of Pins: 3
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 10.
BLF6G21-10G_2
Product data sheet
Document ID
BLF6G21-10G_2
Modifications:
BLF6G21-10G_1
Revision history
Table 9.
Acronym
3GPP
CCDF
CDMA
CW
DPCH
EDGE
GSM
HF
LDMOS
PAR
PDPCH
PHS
RF
VSWR
W-CDMA
Release date
20091211
20090511
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Section 6 on page
Table 7 on page
Section 7.1 on page
Section 7.2 on page
Section 7.3 on page
Section 7.4 on page
Abbreviations
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Code Division Multiple Access
Continuous Wave
Dedicated Physical CHannel
Enhanced Data rates for GSM Evolution
Global System for Mobile communications
High Frequency
Laterally Diffused Metal Oxide Semiconductor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Personal Handy-phone System
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
Data sheet status
Product data sheet
Objective data sheet
3: added some values.
Rev. 02 — 11 December 2009
3: added some values.
3: added some values.
4: added CW powersweeps.
5: added 1-carrier W-CDMA powersweeps.
6: added 2-carrier W-CDMA powersweeps.
Change notice
-
-
BLF6G21-10G
Power LDMOS transistor
Supersedes
BLF6G21-10G_1
-
© NXP B.V. 2009. All rights reserved.
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