BLF6G21-10G NXP Semiconductors, BLF6G21-10G Datasheet - Page 5

• Manufacturer Part Number: BLF6G21-10G
• Description: LDMOS, RF, 10W, HF-2.2GHZ, SOT538A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G21-10G

• Transistor Type: N Channel
• Drain Source Voltage Vds: 65V
• Power Dissipation Pd: 10W
• No. Of Pins: 3
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLF6G21-10G_2
Product data sheet
Fig 5.
(dB)
G
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
20.0
19.6
19.2
18.8
18.4
18.0
p
0
V
1-carrier W-CDMA power gain as a function of
load power; typical values
DS
= 28 V; I
7.3 1-carrier W-CDMA
1
Dq
= 100 mA.
Fig 4.
2
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
V
1-carrier W-CDMA input return loss as a function of load power; typical values
DS
(1)
(2)
(3)
= 28 V; I
3
P
001aal124
L
(W)
Dq
Rev. 02 — 11 December 2009
RL
(dB)
= 100 mA.
4
in
50
40
30
20
10
0
0
Fig 6.
1
(%)
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
D
50
40
30
20
10
(1)
(2)
(3)
0
0
V
1-carrier W-CDMA drain efficiency as a
function of load power; typical values
DS
2
= 28 V; I
1
Dq
3
= 100 mA.
P
001aal123
L
(W)
BLF6G21-10G
2
4
Power LDMOS transistor
(1)
(2)
(3)
3
© NXP B.V. 2009. All rights reserved.
P
001aal125
L
(W)
4
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