BLF6G21-10G NXP Semiconductors, BLF6G21-10G Datasheet - Page 4

• Manufacturer Part Number: BLF6G21-10G
• Description: LDMOS, RF, 10W, HF-2.2GHZ, SOT538A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G21-10G

• Transistor Type: N Channel
• Drain Source Voltage Vds: 65V
• Power Dissipation Pd: 10W
• No. Of Pins: 3
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLF6G21-10G_2
Product data sheet
Fig 2.
(dB)
G
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
19.5
18.5
17.5
16.5
p
0
V
CW power gain as a function of load power;
typical values
DS
= 28 V; I
7.2 CW
4
Dq
= 100 mA.
Fig 1.
8
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
(1)
(2)
(3)
V
CW input return loss as a function of load power; typical values
DS
= 28 V; I
12
P
001aal121
L
(W)
Dq
Rev. 02 — 11 December 2009
RL
(dB)
= 100 mA.
16
in
50
40
30
20
10
0
0
Fig 3.
4
(%)
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
D
80
60
40
20
(1)
(2)
(3)
0
0
V
CW drain efficiency as a function of
load power; typical values
DS
8
= 28 V; I
4
12
Dq
= 100 mA.
P
001aal120
L
(W)
BLF6G21-10G
8
16
Power LDMOS transistor
12
© NXP B.V. 2009. All rights reserved.
P
001aal122
(1)
(2)
(3)
L
(W)
16
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