BLF6G21-10G NXP Semiconductors, BLF6G21-10G Datasheet - Page 6

• Manufacturer Part Number: BLF6G21-10G
• Description: LDMOS, RF, 10W, HF-2.2GHZ, SOT538A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G21-10G

• Transistor Type: N Channel
• Drain Source Voltage Vds: 65V
• Power Dissipation Pd: 10W
• No. Of Pins: 3
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLF6G21-10G_2
Product data sheet
Fig 7.
ACPR
(dBc)
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
30
40
50
60
0
V
1-carrier W-CDMA adjacent channel power
ratio as a function of load power;
typical values
DS
= 28 V; I
7.4 2-carrier W-CDMA
1
Dq
= 100 mA; carrier spacing 5 MHz.
Fig 9.
2
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
(3)
(2)
(1)
V
2-carrier W-CDMA input return loss as a function of load power; typical values
DS
= 28 V; I
3
P
001aal126
L
(W)
Dq
Rev. 02 — 11 December 2009
RL
(dB)
= 100 mA.
4
in
40
30
20
10
0
0
Fig 8.
ACPR
0.6
(dBc)
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
52
56
60
64
(1)
(2)
(3)
0
V
1-carrier W-CDMA adjacent channel power
ratio as a function of load power;
typical values
DS
= 28 V; I
1.2
1
Dq
P
= 100 mA; carrier spacing 10 MHz.
L
001aal128
(W)
BLF6G21-10G
2
1.8
Power LDMOS transistor
(3)
(2)
(1)
3
© NXP B.V. 2009. All rights reserved.
P
001aal127
L
(W)
4
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