NAND01GR3B2CZA6E Micron Technology Inc, NAND01GR3B2CZA6E Datasheet - Page 23

• Manufacturer Part Number: NAND01GR3B2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND01GR3B2CZA6E

• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Program/erase Volt (typ): 1.7 to 1.95V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

NAND01G-B2C
Figure 8.
RB
I/O
CL
AL
W
R
E
Read operations (intercepted by E)
00h
Add 1
Col.
Column
Address
Add 2
Col.
Add 1
Row
Address
Row
Add 2
Row
tWHBL
tBLBH1
30h
tWHBH
Busy
tALLRL1
Data
tBHRL
N
tRLRL
Data
N+1
Data
N+2
Device operations
tEHCLX
ai14292
tEHQX
tEHQZ
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