NAND01GR3B2CZA6E Micron Technology Inc, NAND01GR3B2CZA6E Datasheet - Page 58

• Manufacturer Part Number: NAND01GR3B2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND01GR3B2CZA6E

• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Program/erase Volt (typ): 1.7 to 1.95V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

DC and AC parameters
Figure 30. Block erase AC waveforms
Figure 31. Reset AC waveforms
58/67
I/O
RB
R
CL
AL
W
RB
I/O
E
AL
CL
W
R
Setup command
Block Erase
FFh
(Write Cycle time)
tWLWL
60h
cycle 1
Add.
address
Block
input
cycle 2
Add.
tWHBL
Confirm
(Reset Busy time)
code
D0h
tBLBH4
Block Erase
(Erase Busy time)
tBLBH3
70h
Read Status Register
SR0
NAND01G-B2C
ai14295
ai08043