MT41J64M16JT-15E:G Micron Technology Inc, MT41J64M16JT-15E:G Datasheet - Page 117

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MT41J64M16JT-15E:G

Manufacturer Part Number
MT41J64M16JT-15E:G
Description
MICMT41J64M16JT-15E:G DDR3 SDRAM 64MB X1
Manufacturer
Micron Technology Inc
Series
-r
Type
DDR3 SDRAMr

Specifications of MT41J64M16JT-15E:G

Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
1G (64M x 16)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
96-TFBGA
Organization
64Mx16
Density
1Gb
Address Bus
16b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
355mA
Pin Count
96
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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0
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MT41J64M16JT-15E:G TR
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Micron Technology Inc
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CAS Write Latency (CWL)
Figure 59: CAS Write Latency
AUTO SELF REFRESH (ASR)
SELF REFRESH TEMPERATURE (SRT)
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_4.fm - Rev. F 11/08 EN
BC4
DQS, DQS#
Command
CK#
DQ
CK
ACTIVE n
T0
WRITE n
CWL is defined by MR2[5:3] and is the delay, in clock cycles, from the releasing of the
internal write to the latching of the first data in. CWL must be correctly set to the corre-
sponding operating clock frequency (see Figure 58 on page 116). The overall WRITE
latency (WL) is equal to CWL + AL (Figure 56 on page 113), as shown in Figure 59.
Mode register MR2[6] is used to disable/enable the ASR function.
When ASR is disabled, the self refresh mode’s refresh rate is assumed to be at the normal
85°C limit (sometimes referred to as 1X refresh rate). In the disabled mode, ASR requires
the user to ensure the DRAM never exceeds a T
user enables the SRT feature listed below when the T
Enabling ASR assumes the DRAM self refresh rate is changed automatically from 1X to
2X when the case temperature exceeds 85°C. This enables the user to operate the DRAM
beyond the standard 85°C limit up to the optional extended temperature range of 95°C
while in self refresh mode.
The standard self refresh current test specifies test conditions to normal case tempera-
ture (85°C) only, meaning if ASR is enabled, the standard self refresh current specifica-
tions do not apply (see “Extended Temperature Usage” on page 150).
Mode register MR2[7] is used to disable/enable the SRT function. When SRT is disabled,
the self refresh mode’s refresh rate is assumed to be at the normal 85°C limit (sometimes
referred to as 1X refresh rate). In the disabled mode, SRT requires the user to ensure the
DRAM never exceeds a T
When SRT is enabled, the DRAM self refresh is changed internally from 1X to 2X, regard-
less of the case temperature. This enables the user to operate the DRAM beyond the
standard 85°C limit up to the optional extended temperature range of 95°C while in self
refresh mode. The standard self refresh current test specifies test conditions to normal
case temperature (85°C) only, meaning if SRT is enabled, the standard self refresh
current specifications do not apply (see “Extended Temperature Usage” on page 150).
T1
t RCD (MIN)
NOP
AL = 5
T2
WL = AL + CWL = 11
C
of 85°C while in self refresh mode unless the user enables ASR.
NOP
T6
117
CWL = 6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T11
NOP
Indicates A Break in
Time Scale
C
1Gb: x4, x8, x16 DDR3 SDRAM
of 85°C while in self refresh unless the
C
NOP
T12
DI
is between 85°C and 95°C.
n
n + 1
DI
©2006 Micron Technology, Inc. All rights reserved.
Transitioning Data
n + 2
NOP
T13
DI
Operations
n + 3
DI
Don’t Care
NOP
T14

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