MT41J64M16JT-15E:G Micron Technology Inc, MT41J64M16JT-15E:G Datasheet - Page 134

• Manufacturer Part Number: MT41J64M16JT-15E:G
• Description: MICMT41J64M16JT-15E:G DDR3 SDRAM 64MB X1
• Manufacturer: Micron Technology Inc
• Series: -r
• Type: DDR3 SDRAMr

Specifications of MT41J64M16JT-15E:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (64M x 16)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 96-TFBGA
• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 355mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 76: READ to PRECHARGE (BC4)
Figure 77: READ to PRECHARGE (AL = 5, CL = 6)
Figure 78: READ with Auto Precharge (AL = 4, CL = 6)
DQS, DQS#
Command
DQS, DQS#
DQS, DQS#
Command
Command
Address
Address
Address
CK#
CK
DQ
CK#
CK#
DQ
CK
DQ
CK
Bank a,
READ
READ
Bank a,
Bank a,
Col n
Col n
READ
T0
T0
Col n
T0
NOP
T1
NOP
NOP
T1
T1
NOP
T2
AL = 4
NOP
t RAS
NOP
T2
T2
t RTP
AL = 5
NOP
T3
NOP
NOP
T3
T3
NOP
T4
NOP
NOP
T4
T4
t RAS
Bank a,
(or all)
PRE
T5
NOP
NOP
T5
T5
NOP
T6
t RTP (MIN)
NOP
NOP
T6
T6
t RAS (MIN)
NOP
T7
CL = 6
t RTP
NOP
NOP
T7
T7
NOP
T8
DO
n
CL = 6
n + 1
DO
NOP
NOP
NOP
t RP
T8
T8
T9
n + 2
DO
n + 3
DO
Bank a,
T10
NOP
(or all)
PRE
NOP
T9
T9
NOP
T11
T10
NOP
NOP
T10
DO
n
NOP
T12
n + 1
DO
NOP
T11
NOP
T11
n + 2
DO
DO
n
Bank a,
Row b
ACT
T13
n + 1
n + 3
DO
DO
Indicates A Break in
Time Scale
NOP
t RP
T12
NOP
T12
n + 2
DO
NOP
T14
n + 3
DO
NOP
T13
NOP
T13
NOP
T15
Transitioning Data
Transitioning Data
Transitioning Data
NOP
T14
NOP
t RP
NOP
T16
Bank a,
Row b
ACT
Bank a,
T15
Row b
ACT
Don’t Care
Ta0
Don’t Care
NOP
Don’t Care
T17