MT41J64M16JT-15E:G Micron Technology Inc, MT41J64M16JT-15E:G Datasheet - Page 49

no-image

MT41J64M16JT-15E:G

Manufacturer Part Number
MT41J64M16JT-15E:G
Description
MICMT41J64M16JT-15E:G DDR3 SDRAM 64MB X1
Manufacturer
Micron Technology Inc
Series
-r
Type
DDR3 SDRAMr

Specifications of MT41J64M16JT-15E:G

Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
1G (64M x 16)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
96-TFBGA
Organization
64Mx16
Density
1Gb
Address Bus
16b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
355mA
Pin Count
96
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT41J64M16JT-15E:G
Manufacturer:
TI
Quantity:
87
Part Number:
MT41J64M16JT-15E:G
Manufacturer:
MICRON
Quantity:
11 200
Part Number:
MT41J64M16JT-15E:G
Manufacturer:
MICRON53
Quantity:
1 964
Part Number:
MT41J64M16JT-15E:G
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT41J64M16JT-15E:G
Manufacturer:
MICRON/美光
Quantity:
20 000
Part Number:
MT41J64M16JT-15E:G
0
Part Number:
MT41J64M16JT-15E:G TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
ODT Characteristics
Figure 24: ODT Levels and I-V Characteristics
Table 29:
ODT Resistors
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
Parameter/Condition
R
Deviation of VM with respect to V
TT
effective impedance
On-Die Termination DC Electrical Characteristics
Notes:
ODT effective resistance R
DM, DQS, DQS#, and TDQS, TDQS# balls (x8 devices only). The ODT target values are
listed in Table 29 and Table 30 on page 50. A functional representation of the ODT is
shown in Figure 24. The individual pull-up and pull-down resistors (R
are defined as follows:
• R
• R
1. Tolerance limits are applicable after proper ZQ calibration has been performed at a stable
2. Measurement definition for R
3. Measure voltage (VM) at the tested pin with no load:
Table 30 on page 50 provides an overview of the ODT DC electrical characteristics. The
values provided are not specification requirements; however, they can be used as design
guidelines to indicate what R
• R
• R
• R
• R
• R
temperature and voltage (V
either the temperature or voltage changes after calibration.
I[V
To
other
circuitry
such as
RCV, . . .
TT PU
TT PD
TT
TT
TT
TT
TT
IH
DD
120Ω is made up of R
60Ω is made up of R
40Ω is made up of R
30Ω is made up of R
20Ω is made up of R
(
Chip in termination mode
AC
Q/2
= (V
= (V
)], then apply V
OUT
DD
R
R
TT PU
TT PD
I
I
R
ODT
PU
PD
Q - V
TT
ΔVM
)/|I
Symbol
R
=
ΔVM
TT
OUT
OUT
_
------------------------------------------------------------- -
|I V
=
EFF
(
|, under the condition that R
IL
V
)/|I
(
IH AC
2
----------------- - 1
AC
IH AC
V
TT
TT 60PD120
TT 40PD80
TT 30PD60
TT 20PD40
×
DD
OUT
(
TT 120PD240
) to pin under test and measure current I[V
(
DD
is defined by MR1[9, 6, and 2]. ODT is applied to the DQ,
TT
VM
49
Q
TT
Q = V
)
|, under the condition that R
) V
is targeted to provide:
) I V
I
I
: Apply V
OUT
OUT
Min
–5
(
= I
and R
and R
and R
DD
IL AC
and R
PD
V
DQ
V
V
IL AC
×
(
DD
OUT
SS
, V
- I
and R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
100
Q
(
Q
PU
SS
IH
)
TT 20PU40
TT 40PU80
TT 30PU60
Q = V
(
TT 60PU120
See Table 30 on page 50
)
AC
)|
TT 120PU240
) to pin under test and measure current
Nom
SS
1Gb: x4, x8, x16 DDR3 SDRAM
). Refer to "ODT Sensitivity" on page 50 if
TT PU
is turned off
TT PD
Max
©2006 Micron Technology, Inc. All rights reserved.
ODT Characteristics
+5
is turned off
IL
(
TT PU
AC
)]:
Units
%
and R
TT PD
Notes
1, 2, 3
1, 2
)

Related parts for MT41J64M16JT-15E:G