PSMN1R9-25YLC,115 NXP Semiconductors, PSMN1R9-25YLC,115 Datasheet - Page 10
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PSMN1R9-25YLC,115
Manufacturer Part Number
PSMN1R9-25YLC,115
Description
MOSFET Power N-Ch 25V 2.05 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN1R9-25YLC115.pdf
(15 pages)
Specifications of PSMN1R9-25YLC,115
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.05 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
141 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Gate Charge Qg
57 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.05 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.95V @ 1mA
Gate Charge (qg) @ Vgs
57nC @ 10V
Input Capacitance (ciss) @ Vds
3504pF @ 12V
Power - Max
141W
Mounting Type
Surface Mount
Lead Free Status / Rohs Status
Details
Other names
934065201115
NXP Semiconductors
PSMN1R9-25YLC
Product data sheet
Fig 16. Input, output and reverse transfer capacitances
Fig 18. Reverse recovery timing definition
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
-1
1
10
(A)
I
D
0
V
All information provided in this document is subject to legal disclaimers.
C
003a a f 835
DS
C
C
os s
is s
rs s
(V)
10
2
Rev. 1 — 2 May 2011
N-channel 25 V 2.05 mΩ logic level MOSFET in LFPAK using
t
a
Fig 17. Source current as a function of source-drain
t
rr
(A)
I
100
S
80
60
40
20
t
b
0
voltage; typical values
0
I
RM
003a a f 444
0.25 I
t (s )
R M
T
j
= 150 °C
0.3
PSMN1R9-25YLC
0.6
0.9
T
j
© NXP B.V. 2011. All rights reserved.
= 25 °C
003a a f 838
V
S D
(V)
1.2
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