PSMN1R9-25YLC,115 NXP Semiconductors, PSMN1R9-25YLC,115 Datasheet - Page 10

• Manufacturer Part Number: PSMN1R9-25YLC,115
• Description: MOSFET Power N-Ch 25V 2.05 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R9-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.05 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 141 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 57 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.05 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 57nC @ 10V
• Input Capacitance (ciss) @ Vds: 3504pF @ 12V
• Power - Max: 141W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065201115

NXP Semiconductors
PSMN1R9-25YLC
Product data sheet
Fig 16. Input, output and reverse transfer capacitances
Fig 18. Reverse recovery timing definition
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
-1
1
10
(A)
I
D
0
V
All information provided in this document is subject to legal disclaimers.
C
003a a f 835
DS
C
C
os s
is s
rs s
(V)
10
2
Rev. 1 — 2 May 2011
N-channel 25 V 2.05 mΩ logic level MOSFET in LFPAK using
t
a
Fig 17. Source current as a function of source-drain
t
rr
(A)
I
100
S
80
60
40
20
t
b
0
voltage; typical values
0
I
RM
003a a f 444
0.25 I
t (s )
R M
T
j
= 150 °C
0.3
PSMN1R9-25YLC
0.6
0.9
T
j
© NXP B.V. 2011. All rights reserved.
= 25 °C
003a a f 838
V
S D
(V)
1.2
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