PSMN1R9-25YLC,115 NXP Semiconductors, PSMN1R9-25YLC,115 Datasheet - Page 6
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PSMN1R9-25YLC,115
Manufacturer Part Number
PSMN1R9-25YLC,115
Description
MOSFET Power N-Ch 25V 2.05 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN1R9-25YLC115.pdf
(15 pages)
Specifications of PSMN1R9-25YLC,115
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.05 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
141 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Gate Charge Qg
57 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.05 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.95V @ 1mA
Gate Charge (qg) @ Vgs
57nC @ 10V
Input Capacitance (ciss) @ Vds
3504pF @ 12V
Power - Max
141W
Mounting Type
Surface Mount
Lead Free Status / Rohs Status
Details
Other names
934065201115
NXP Semiconductors
7. Characteristics
Table 7.
PSMN1R9-25YLC
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
gate resistance
Conditions
I
I
I
see
I
I
V
V
V
V
V
see
V
see
V
see
V
see
f = 1 MHz
I
see
I
see
I
I
see
I
see
V
T
V
R
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
G(ext)
= 25 °C; see
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 10 mA; V
= 1 mA; V
= 25 A; V
= 25 A; V
= 0 A; V
= 25 A; V
= 25 A; V
Figure
Figure 12
Figure
Figure 12
Figure
Figure
Figure
Figure
Figure 15
= 25 V; V
= 25 V; V
= 12 V; V
= 12 V; R
= 16 V; V
= -16 V; V
= 4.5 V; I
= 4.5 V; I
= 10 V; I
= 10 V; I
= 4.7 Ω
DS
Rev. 1 — 2 May 2011
N-channel 25 V 2.05 mΩ logic level MOSFET in LFPAK using
10; see
12; see
12; see
14; see
14; see
14; see
DS
DS
DS
DS
DS
DS
D
D
D
D
= 0 V; V
DS
GS
GS
GS
DS
L
GS
GS
DS
= 25 A; T
= 25 A; T
= 12 V; V
= 12 V; V
= 12 V; V
= 12 V; see
= V
= V
= 25 A; T
= 25 A; T
Figure 16
= 0.5 Ω; V
= V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
Figure 11
Figure 13
Figure 13
Figure 15
Figure 15
Figure 15
GS
; T
; T
GS
; T
j
j
j
j
GS
GS
GS
= 10 V
j
j
j
j
j
= 25 °C;
= -55 °C
= 25 °C;
= 150 °C;
j
j
j
j
= 25 °C;
= 150 °C;
GS
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= -55 °C
= 25 °C
Figure
= 10 V;
= 4.5 V;
= 4.5 V;
= 4.5 V;
14;
PSMN1R9-25YLC
Min
25
22.5
1.05
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.47
-
-
-
-
-
-
2.2
-
1.7
-
0.8
57
27
55
8.4
5.9
2.5
7.4
2.45
3504
761
275
27
28
48
21
© NXP B.V. 2011. All rights reserved.
-
Max
-
-
1.95
-
2.25
1
100
100
100
2.7
4.35
2.05
3.25
1.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
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