PSMN1R9-25YLC,115 NXP Semiconductors, PSMN1R9-25YLC,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN1R9-25YLC,115
• Description: MOSFET Power N-Ch 25V 2.05 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R9-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.05 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 141 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 57 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.05 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 57nC @ 10V
• Input Capacitance (ciss) @ Vds: 3504pF @ 12V
• Power - Max: 141W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065201115

NXP Semiconductors
PSMN1R9-25YLC
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DS on
8
6
4
2
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
20
Q
GS1
I
Q
D
GS
40
Q
GS2
2.6
Q
G(tot)
60
Q
GD
V
80
GS
All information provided in this document is subject to legal disclaimers.
003a a f 830
003aaa508
2.8
(V) =
I
D
(A)
3.0
3.5
4.5
10
100
Rev. 1 — 2 May 2011
N-channel 25 V 2.05 mΩ logic level MOSFET in LFPAK using
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
(V)
a
1.5
0.5
GS
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
0
PSMN1R9-25YLC
20
V
GS
60
(V)=4.5V
V
DS
12V
40
= 5V
120
20V
Q
© NXP B.V. 2011. All rights reserved.
G
003a a f 837
003a a f 831
T
(nC)
j
10V
(°C)
180
60
9 of 15