PSMN1R9-25YLC,115 NXP Semiconductors, PSMN1R9-25YLC,115 Datasheet - Page 4
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PSMN1R9-25YLC,115
Manufacturer Part Number
PSMN1R9-25YLC,115
Description
MOSFET Power N-Ch 25V 2.05 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN1R9-25YLC115.pdf
(15 pages)
Specifications of PSMN1R9-25YLC,115
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.05 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
141 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Gate Charge Qg
57 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.05 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.95V @ 1mA
Gate Charge (qg) @ Vgs
57nC @ 10V
Input Capacitance (ciss) @ Vds
3504pF @ 12V
Power - Max
141W
Mounting Type
Surface Mount
Lead Free Status / Rohs Status
Details
Other names
934065201115
NXP Semiconductors
PSMN1R9-25YLC
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
210
180
150
120
90
60
30
0
mounting base temperature
Continuous drain current as a function of
Single pulse avalanche rating; avalanche current as a function of avalanche time
0
50
(1)
100
(A)
I
10
10
AL
10
10
-1
150
3
2
1
10
All information provided in this document is subject to legal disclaimers.
-3
T
003aaf825
mb
(°C)
200
10
-2
Rev. 1 — 2 May 2011
N-channel 25 V 2.05 mΩ logic level MOSFET in LFPAK using
10
-1
(1)
(2)
Fig 2.
P
(%)
der
120
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
0
003a a f 839
t
AL
(ms )
10
50
PSMN1R9-25YLC
100
150
© NXP B.V. 2011. All rights reserved.
T
mb
03na19
(°C)
200
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