PSMN1R9-25YLC,115 NXP Semiconductors, PSMN1R9-25YLC,115 Datasheet - Page 5

• Manufacturer Part Number: PSMN1R9-25YLC,115
• Description: MOSFET Power N-Ch 25V 2.05 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R9-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.05 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 141 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 57 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.05 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 57nC @ 10V
• Input Capacitance (ciss) @ Vds: 3504pF @ 12V
• Power - Max: 141W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065201115

NXP Semiconductors
6. Thermal characteristics
Table 6.
PSMN1R9-25YLC
Product data sheet
Symbol
R
Fig 4.
Fig 5.
th(j-mb)
Z
(K/W)
th(j-mb)
(A)
I
D
10
10
10
10
10
10
10
10
10
-1
-2
-3
-1
1
4
3
2
1
10
1e-6
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
δ = 0.5
0.2
0.05
0.02
0.1
Thermal characteristics
single shot
Parameter
thermal resistance from
junction to mounting base
10
-5
Limit R
DSon
= V
DS
All information provided in this document is subject to legal disclaimers.
10
/ I
1
D
-4
Conditions
see
Rev. 1 — 2 May 2011
N-channel 25 V 2.05 mΩ logic level MOSFET in LFPAK using
Figure 5
DC
10
-3
10
10
-2
PSMN1R9-25YLC
Min
-
V
t
100 μ s
1 ms
10 ms
100 ms
DS
p
10
=10 μ s
P
(V)
-1
Typ
0.92
t
p
T
© NXP B.V. 2011. All rights reserved.
t
p
003aaf826
003aaf827
δ =
(s)
Max
1.06
t
T
p
t
10
1
2
Unit
K/W
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