PSMN4R3-80ES,127 NXP Semiconductors, PSMN4R3-80ES,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN4R3-80ES,127
• Description: MOSFET Power N-Ch 80V 4.3 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN4R3-80ES,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.3 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 306 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: I2PAK
• Gate Charge Qg: 104 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 111nC @ 10V
• Input Capacitance (ciss) @ Vds: 8161pF @ 40V
• Power - Max: 306W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065164127

NXP Semiconductors
Table 6.
[1]
PSMN4R3-80ES
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
Measured 3 mm from package.
R
(m Ω )
(S)
g
DSon
250
200
150
100
fs
50
25
20
15
10
0
5
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
15
5
30
…continued
10
45
15
60
All information provided in this document is subject to legal disclaimers.
003aaf619
003aaf621
V
GS
I
D
(A)
(V)
Conditions
I
see
I
V
75
20
S
S
GS
Rev. 02 — 18 April 2011
= 25 A; V
= 25 A; dI
Figure 17
= 0 V; V
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
GS
S
DS
/dt = 100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 20 V
(A)
I
(A)
D
I
D
100
80
60
40
20
80
60
40
20
0
0
j
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Transfer characteristics: drain current as a
Output characteristics: drain current as a
0
0
= 25 °C;
20.0
8.0
6.0
5.5
0.5
2
T
PSMN4R3-80ES
j
= 175 ° C
Min
-
-
-
4
1
Typ
0.8
59
109
V
T
GS
j
V
= 25 ° C
V
© NXP B.V. 2011. All rights reserved.
DS
GS
(V) = 4.5
003aaf620
003aaf622
(V)
(V)
Max
1.2
-
-
4.4
4.2
4.0
1.5
6
Unit
V
ns
nC
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