PSMN4R3-80ES,127 NXP Semiconductors, PSMN4R3-80ES,127 Datasheet - Page 7
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PSMN4R3-80ES,127
Manufacturer Part Number
PSMN4R3-80ES,127
Description
MOSFET Power N-Ch 80V 4.3 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN4R3-80ES127.pdf
(15 pages)
Specifications of PSMN4R3-80ES,127
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.3 mOhms
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
120 A
Power Dissipation
306 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
I2PAK
Gate Charge Qg
104 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
111nC @ 10V
Input Capacitance (ciss) @ Vds
8161pF @ 40V
Power - Max
306W
Mounting Type
Through Hole
Lead Free Status / Rohs Status
Details
Other names
934065164127
NXP Semiconductors
Table 6.
[1]
PSMN4R3-80ES
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
Measured 3 mm from package.
R
(m Ω )
(S)
g
DSon
250
200
150
100
fs
50
25
20
15
10
0
5
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
15
5
30
…continued
10
45
15
60
All information provided in this document is subject to legal disclaimers.
003aaf619
003aaf621
V
GS
I
D
(A)
(V)
Conditions
I
see
I
V
75
20
S
S
GS
Rev. 02 — 18 April 2011
= 25 A; V
= 25 A; dI
Figure 17
= 0 V; V
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
GS
S
DS
/dt = 100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 20 V
(A)
I
(A)
D
I
D
100
80
60
40
20
80
60
40
20
0
0
j
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Transfer characteristics: drain current as a
Output characteristics: drain current as a
0
0
= 25 °C;
20.0
8.0
6.0
5.5
0.5
2
T
PSMN4R3-80ES
j
= 175 ° C
Min
-
-
-
4
1
Typ
0.8
59
109
V
T
GS
j
V
= 25 ° C
V
© NXP B.V. 2011. All rights reserved.
DS
GS
(V) = 4.5
003aaf620
003aaf622
(V)
(V)
Max
1.2
-
-
4.4
4.2
4.0
1.5
6
Unit
V
ns
nC
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