PSMN4R3-80ES,127 NXP Semiconductors, PSMN4R3-80ES,127 Datasheet - Page 10
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PSMN4R3-80ES,127
Manufacturer Part Number
PSMN4R3-80ES,127
Description
MOSFET Power N-Ch 80V 4.3 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN4R3-80ES127.pdf
(15 pages)
Specifications of PSMN4R3-80ES,127
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.3 mOhms
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
120 A
Power Dissipation
306 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
I2PAK
Gate Charge Qg
104 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
111nC @ 10V
Input Capacitance (ciss) @ Vds
8161pF @ 40V
Power - Max
306W
Mounting Type
Through Hole
Lead Free Status / Rohs Status
Details
Other names
934065164127
NXP Semiconductors
PSMN4R3-80ES
Product data sheet
Fig 17. Source current as a function of source-drain voltage; typical values
(A)
I
S
80
60
40
20
0
0
All information provided in this document is subject to legal disclaimers.
T
j
= 175 ° C
0.3
Rev. 02 — 18 April 2011
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
0.6
T
j
= 25 ° C
0.9
V
003aaf627
SD
(V)
1.2
PSMN4R3-80ES
© NXP B.V. 2011. All rights reserved.
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