BUK7528-55A NXP Semiconductors, BUK7528-55A Datasheet - Page 4

• Manufacturer Part Number: BUK7528-55A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7528-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 42 A
• Power Dissipation: 99 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7528-55A,127

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7528-55A
Product data sheet
Symbol
R
R
Fig 5.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
1
10
−6
All information provided in this document is subject to legal disclaimers.
δ
0.2
0.1
0.05
0.02
0
= 0.5
10
−4
Rev. 02 — 21 April 2011
10
−2
Conditions
in free air
P
1
t
p
T
10
N-channel TrenchMOS standard level FET
2
003aaf458
t
δ =
p
(s)
T
t
t
p
10
4
BUK7528-55A
Min
-
-
Typ
-
60
© NXP B.V. 2011. All rights reserved.
-
Max
1.5
Unit
K/W
K/W
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