BUK7528-55A NXP Semiconductors, BUK7528-55A Datasheet - Page 6
![MOSFET Power RAIL PWR-MOS](/photos/16/4/160465/to3_sml.jpg)
BUK7528-55A
Manufacturer Part Number
BUK7528-55A
Description
MOSFET Power RAIL PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7528-55A.pdf
(13 pages)
Specifications of BUK7528-55A
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.028 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
42 A
Power Dissipation
99 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Other names
BUK7528-55A,127
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BUK7528-55A
Manufacturer:
NXP
Quantity:
72 000
Company:
Part Number:
BUK7528-55A
Manufacturer:
NXP
Quantity:
12 500
NXP Semiconductors
BUK7528-55A
Product data sheet
Fig 6.
Fig 8.
R
(mΩ)
DS(on)
(A)
I
D
100
80
60
40
20
50
40
30
20
10
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
0
6
j
j
18
16
12
11.5
= 25 °C
= 25 °C; I
2
10
D
V
= 25 A
GS
10.5
4
10
(V) = 11
14
6
18
All information provided in this document is subject to legal disclaimers.
8
V
003aaf459
5.0 4.5
003aaf461
V
GS
DS
(V)
(V)
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
10
22
Rev. 02 — 21 April 2011
Fig 7.
Fig 9.
R
(mΩ)
DS(on)
(A)
I
D
100
70
60
50
40
30
20
80
60
40
20
0
of drain current; typical values
function of gate-source voltage; typical values
T
Drain-source on-state resistance as a function
V
Transfer characteristics: drain current as a
0
0
j
DS
N-channel TrenchMOS standard level FET
= 25 °C
> I
D
20
6
x R
T
j
= 175 °C
6.5
DSon
4
40
7
BUK7528-55A
T
j
60
= 25 °C
8
8
V
© NXP B.V. 2011. All rights reserved.
9
80
GS
10
003aaf460
003aaf462
I
(V)
D
(A)
100
12
6 of 13