BUK7528-55A NXP Semiconductors, BUK7528-55A Datasheet - Page 6

• Manufacturer Part Number: BUK7528-55A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7528-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 42 A
• Power Dissipation: 99 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7528-55A,127

NXP Semiconductors
BUK7528-55A
Product data sheet
Fig 6.
Fig 8.
R
(mΩ)
DS(on)
(A)
I
D
100
80
60
40
20
50
40
30
20
10
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
0
6
j
j
18
16
12
11.5
= 25 °C
= 25 °C; I
2
10
D
V
= 25 A
GS
10.5
4
10
(V) = 11
14
6
18
All information provided in this document is subject to legal disclaimers.
8
V
003aaf459
5.0 4.5
003aaf461
V
GS
DS
(V)
(V)
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
10
22
Rev. 02 — 21 April 2011
Fig 7.
Fig 9.
R
(mΩ)
DS(on)
(A)
I
D
100
70
60
50
40
30
20
80
60
40
20
0
of drain current; typical values
function of gate-source voltage; typical values
T
Drain-source on-state resistance as a function
V
Transfer characteristics: drain current as a
0
0
j
DS
N-channel TrenchMOS standard level FET
= 25 °C
> I
D
20
6
x R
T
j
= 175 °C
6.5
DSon
4
40
7
BUK7528-55A
T
j
60
= 25 °C
8
8
V
© NXP B.V. 2011. All rights reserved.
9
80
GS
10
003aaf460
003aaf462
I
(V)
D
(A)
100
12
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