BUK7528-55A NXP Semiconductors, BUK7528-55A Datasheet - Page 8

• Manufacturer Part Number: BUK7528-55A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7528-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 42 A
• Power Dissipation: 99 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7528-55A,127

NXP Semiconductors
BUK7528-55A
Product data sheet
Fig 14. Input, output and reverse transfer capacitances
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(nF)
C
1.6
1.2
0.8
0.4
0.0
10
as a function of drain-source voltage; typical
values
V
V
−2
GS
GS
= 0 V; f = 1 MHz
= 0 V
10
−1
1
C
C
C
oss
iss
rss
(A)
I
F
120
80
40
10
0
0.0
All information provided in this document is subject to legal disclaimers.
V
003aaf467
DS
(V)
10
Rev. 02 — 21 April 2011
2
T
0.5
j
= 175 °C
Fig 15. Gate-source voltage as a function of gate
V
1.0
(V)
GS
10
T
8
6
4
2
0
j
V
charge; typical values
= 25 °C
T
0
SDS
j
N-channel TrenchMOS standard level FET
= 25 °C; I
003aaf469
(V)
1.5
D
V
10
= 50 A
DS
= 14 V
BUK7528-55A
20
V
DS
Q
© NXP B.V. 2011. All rights reserved.
G
= 44 V
003aaf468
(nC)
30
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