BUK7528-55A NXP Semiconductors, BUK7528-55A Datasheet - Page 7

• Manufacturer Part Number: BUK7528-55A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7528-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 42 A
• Power Dissipation: 99 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7528-55A,127

NXP Semiconductors
BUK7528-55A
Product data sheet
Fig 10. Forward transconductance as a function of
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
g
(S)
(V)
fs
16
12
8
4
0
5
4
3
2
1
0
−100
drain current; typical values
junction temperature
V
I
0
D
DS
= 1 mA; V
> I
D
x R
20
DSon
DS
0
= V
maximum
GS
minimum
40
typical
100
60
T
All information provided in this document is subject to legal disclaimers.
j
(°C)
I
003aaf463
003aaf465
D
(A)
200
80
Rev. 02 — 21 April 2011
Fig 11. Normalized drain-source on-state resistance
Fig 13. Sub-threshold drain current as a function of
(A)
I
10
10
10
10
10
10
a
D
2.5
1.5
0.5
−1
−2
−3
−4
−5
−6
2
1
−100
factor as a function of junction temperature
gate-source voltage
I
T
0
D
j
N-channel TrenchMOS standard level FET
= 25 A; V
= 25 °C; V
1
GS
DS
0
= 5 V
= V
2 %
2
BUK7528-55A
GS
typical
3
100
T
© NXP B.V. 2011. All rights reserved.
mb
98 %
4
003aaf464
003aaf466
V
(°C)
GS
(V)
200
5
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