BUK75150-55A NXP Semiconductors, BUK75150-55A Datasheet - Page 10

• Manufacturer Part Number: BUK75150-55A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK75150-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK75150-55A,127

NXP Semiconductors
8. Revision history
Table 7.
BUK75150-55A
Product data sheet
Document ID
BUK75150-55A v.3
Modifications:
BUK75_76150_55A v.2
(9397 750 12342)
Revision history
Release date
20110204
20031125
•
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK75150-55A separated from data sheet BUK75_76150_55A v.2.
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 4 February 2011
Data sheet status
Product data sheet
Product data
N-channel TrenchMOS standard level FET
Change notice
-
-
BUK75150-55A
Supersedes
BUK75_76150_55A v.2
-
© NXP B.V. 2011. All rights reserved.
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