BUK75150-55A NXP Semiconductors, BUK75150-55A Datasheet - Page 7

• Manufacturer Part Number: BUK75150-55A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK75150-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK75150-55A,127

NXP Semiconductors
BUK75150-55A
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
350
300
250
200
150
100
10
8
6
4
2
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
5.5
6
5
T j = 175 ° C
6.5
3
7
10
T j = 25 ° C
Label is V
6
8
15
V
All information provided in this document is subject to legal disclaimers.
GS
I
D
GS
(V)
03np19
03np22
(A)
10
(V)
Rev. 03 — 4 February 2011
20
9
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
1.5
0.5
a
5
4
3
2
1
0
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
0
0
BUK75150-55A
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
T
j
j
03ne89
(°C)
( ° C)
03aa32
180
180
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