BUK75150-55A NXP Semiconductors, BUK75150-55A Datasheet - Page 8

• Manufacturer Part Number: BUK75150-55A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK75150-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK75150-55A,127

NXP Semiconductors
BUK75150-55A
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
V DD = 14 V
2
(A)
I
4
S
60
40
20
0
V DD = 44 V
0
Q
All information provided in this document is subject to legal disclaimers.
G
(nC)
03np17
0.5
Rev. 03 — 4 February 2011
6
T
T
j
= 175 ° C
j
= 25 ° C
1
Fig 14. Input, output and reverse transfer capacitances
1.5
(pF)
C
600
400
200
0
10
as a function of drain-source voltage; typical
values
−2
2
N-channel TrenchMOS standard level FET
V
SD
03np16
C
C
C
(V)
iss
oss
rss
2.5
10
−1
BUK75150-55A
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03np23
(V)
10
2
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