LH28F016SCHR-L95 Sharp Electronics, LH28F016SCHR-L95 Datasheet - Page 31

• Manufacturer Part Number: LH28F016SCHR-L95
• Manufacturer: Sharp Electronics

Specifications of LH28F016SCHR-L95

• Cell Type: NOR
• Density: 16Mb
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 21b
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 3.3/5/12V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 8b
• Number Of Words: 2M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

16M Flash Memory
ALTERNATIVE CE-CONTROLLED WRITES
NOTES:
1. Sampled, not 100% tested.
2. Refer to Table 4 for valid A
3. V
4. In systems where CE defines the write pulse width (within a longer WE timing waveform),
Data Sheet
t
t
t
t
t
t
t
t
t
t
t
SYMBOL
AVAV
PHEL
WLEL
ELEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHGL
V
determination of block erase, byte write or lock bit configuration success (SR.1, SR.3, SR.4, SR.5 = 0).
all setup, hold, and inactive WE times should be measured relative to the CE waveform.
CCW
CC
= 2.7 V - 3.6 V, T
should be held at V
Write Cycle Time
RP HIGH Recovery to CE Going LOW
WE Setup to CE Going LOW
CE Pulse Width
Address Setup to CE Going HIGH
Data Setup to CE Going HIGH
Data Hold from CE HIGH
Address Hold from CE HIGH
WE Hold from CE HIGH
CE Pulse Width HIGH
Write Recovery before Read
PPH1/2/3
IN
A
and D
= -40°C to +85°C
, (and if necessary, RP should be held at V
PARAMETER
IN
for block erase, byte write or lock bit configuration.
HH
LH28F016SC-L150
MIN.
) until
150
70
50
50
25
0
0
1
0
5
5
MAX.
UNIT NOTES
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
1
2
2
LH28F016SCT
31