LH28F016SCHR-L95 Sharp Electronics, LH28F016SCHR-L95 Datasheet - Page 4

• Manufacturer Part Number: LH28F016SCHR-L95
• Manufacturer: Sharp Electronics

Specifications of LH28F016SCHR-L95

• Cell Type: NOR
• Density: 16Mb
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 21b
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 3.3/5/12V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 8b
• Number Of Words: 2M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

LH28F016SCT
OVERVIEW
SmartVoltage Flash memory organized as 2MB × 8
bits. The 2MB of data is arranged in thirty-two 64KB
blocks which are indivdually eraseable, lockable, and
unlockable in-system. The memory map is shown in
Figure 3.
4
The LH28F160SCT-L95 is a high-performance 16M
1EFFFF
1DFFFF
1CFFFF
1BFFFF
1AFFFF
0EFFFF
0DFFFF
0CFFFF
0BFFFF
0AFFFF
1FFFFF
19FFFF
18FFFF
17FFFF
16FFFF
15FFFF
14FFFF
13FFFF
12FFFF
11FFFF
10FFFF
0FFFFF
09FFFF
08FFFF
07FFFF
06FFFF
05FFFF
04FFFF
03FFFF
02FFFF
01FFFF
00FFFF
1D0000
1C0000
0D0000
0C0000
1F0000
1E0000
1B0000
1A0000
0F0000
0E0000
0B0000
0A0000
190000
180000
170000
160000
150000
140000
130000
120000
110000
100000
090000
080000
070000
060000
050000
040000
030000
020000
010000
000000
Figure 3. Memory Map
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
28F016SCT-L95-3
29
30
28
27
26
25
24
23
22
20
19
18
17
16
15
14
13
12
10
31
21
11
9
8
7
6
5
4
3
2
0
1
and V
system performance and power expectations. 2.7 V
V
5 V V
a separate 12 V converter, while V
block erase and byte write performance. In addition to
flexible erase and program voltages, the dedicated V
pin gives complete data protection when V
NOTE: Block erase, byte write and lock-bit configuration operations
cally configures the device for optimized read and write
operations.
interfaces between the system processor and internal
operation of the device. A valid command sequence
written to the CUI initiates device automation. An inter-
nal Write State Machine (WSM) automatically executes
the algorithms and timings necessary for block erase,
byte write, and lock-bit configuration operations.
64KB blocks typically within 1 second (5 V V
12 V V
be independently erased 100,000 times. (3.2 million
block erases per device). Block erase suspend mode
allows system software to suspend block erase to read
from or write data to any other block.
typically within 6 µs (5 V V
pend mode enables the system to read data or execute
code from any other flash memory array location.
thirty-two block lock-bits and a master lock-bit, to lock
and unlock blocks. Block lock-bits gate block erase and
byte write operations, while the master lock-bit gates
block lock-bit modification. Lock-bit confifuration oper-
ations (Set Block Lock-Bit, Set Master Lock-Bit, and
Clear Block Lock-Bits commands) set and cleared
lock-bits.
erase, byte write, or lock-bit configuration operation is
finished.
CC
SmartVoltage technology provides a choice of V
Internal V
A Command User Interface (CUI) serves as the
A block erase operation erases one of the device’s
Writing memory data is performed in byte increments
Individual block locking uses a combination of bits,
The status register indicates when the WSM’s block
Table 2. V
consumes approximately one-fifth the power of
2.7 V (See Note)
CC
V
PP
with V
PP
Offered by SmartVoltage Technology
CC
, V
) independent of other blocks. Each block can
combinations, as shown in Table 2, to meet
VOLTAGE
PP
3.3 V
CC
5 V
CC
at 3.3 V, and 5 V eliminates the need for
< 3 V are not supported.
CC
and V
and V
PP
PP
CC
detection cicuitry automati-
Voltage Combinations
, 12 V V
3.3 V, 5 V, 12 V
V
PP
16M Flash Memory
PP
PP
5 V, 12 V
= 12 V maximizes
VOLTAGE
). Byte write sus-
PP
Data Sheet
≤ V
PPLK
CC
CC
PP
.
,