TE28F800B3B110 Intel, TE28F800B3B110 Datasheet - Page 45

• Manufacturer Part Number: TE28F800B3B110
• Manufacturer: Intel

Specifications of TE28F800B3B110

• Lead Free Status / Rohs Status: Not Compliant

Figure 11.
8.3
Table 23.
Datasheet
Write Operations Waveform
Erase and Program Timing
Erase and Program Timing
Address [A]
t
t
t
t
t
t
t
Notes:
1.
2.
3.
Data [D/Q]
BWPB
BWMB
WHQV1
WHQV2
WHQV3
WHRH1
WHRH2
WE# [W]
OE# [G]
CE# [E]
RP# [P]
Vpp [V]
Symbol
/ t
/ t
/ t
/ t
/ t
Typical values measured at T
Excludes external system-level overhead.
Sampled, but not 100% tested.
EHQV1
EHQV2
EHQV3
EHRH1
EHRH2
W1
Intel
4-KW Parameter Block
Word Program Time
32-KW Main Block
Word Program Time
Word Program Time for 0.13
and 0.18 Micron Product
Word Program Time for 0.25
Micron Product
4-KW Parameter Block
Erase Time
32-KW Main Block
Erase Time
Program Suspend Latency
Erase Suspend Latency
W2
®
Order Number: 290580, Revision: 020
Advanced Boot Block Flash Memory (B3)
Parameter
A
= +25 °C and nominal voltages.
W5
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
W3
W3
W10
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
Note
V
1,3
1,3
PP
W4
0.10
Typ
0.8
0.5
1.65 V–3.6 V
12
22
1
5
5
Max
0.30
200
200
2.4
10
20
W7
4
5
W6
W8
0.03
0.24
11.4 V–12.6 V
Typ
0.4
0.6
8
8
5
5
W9
W9
Max
0.12
185
185
10
20
1
4
5
18 Aug 2005
Unit
µs
µs
µs
µs
s
s
s
s
45