TE28F800B3B110 Intel, TE28F800B3B110 Datasheet - Page 50

• Manufacturer Part Number: TE28F800B3B110
• Manufacturer: Intel

Specifications of TE28F800B3B110

• Lead Free Status / Rohs Status: Not Compliant

28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
9.4.4
10.0
18 Aug 2005
50
The deep power-down mode is activated when RP# = V
RP# going low deselects the flash memory and places the outputs in a high-impedance state.
Recovery from deep power-down mode requires a minimum time of t
Characteristics” on page
During program or erase modes, RP# transitioning low aborts the in-progress operation. The
memory contents of the address being programmed or the block being erased are no longer valid,
because the abort compromises data integrity. During deep power-down, all internal circuits switch
to a low-power savings mode (RP# transitioning to V
device clears the Status Register).
Operations Overview
Flash memory combines EEPROM functionality with in-circuit electrical program-and-erase
capability. The B3 flash memory device family uses a Command User Interface (CUI) and
automated algorithms to simplify Program and Erase operations. The CUI allows for 100%
CMOS-level control inputs and fixed power supplies during erasure and programming.
When V
The flash memory device provides standard EEPROM read, standby, and Output-Disable
operations.
Manufacturer identification and device identification data can be accessed through the CUI.
All functions that alter memory contents (program and erase) are accessible through the CUI. The
internal Write State Machine (WSM) completely automates Program and Erase operations, while
the CUI signals the start of an operation and the Status Register reports status.
The CUI handles the WE# interface to the data and address latches, and system status requests
during WSM operation.
Deep Power-Down Mode
•
•
•
•
Read Array
Read Status Register
Clear Status Register
Read Identifier
PP
< V
PPLK
Intel
, the flash memory device executes only the following commands successfully:
®
Order Number: 290580, Revision: 020
Advanced Boot Block Flash Memory (B3)
37).
IL
IL
or turning off power to the flash memory
(GND ± 0.2 V). During read modes,
PHQV
(see
“AC Read
Datasheet