TE28F800B3B110 Intel, TE28F800B3B110 Datasheet - Page 68

• Manufacturer Part Number: TE28F800B3B110
• Manufacturer: Intel

Specifications of TE28F800B3B110

• Lead Free Status / Rohs Status: Not Compliant

28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Figure 17.
18 Aug 2005
68
Block Erase Flowchart
FULL STATUS CHECK PROCEDURE
Block Erase Complete
Read Status Register
Read Status Register
Data (See Above)
Check if Desired
Write D0H and
Block Address
Block Erase
Successful
Full Status
Write 20H
SR.4,5 =
SR.7 =
SR.3 =
SR.5 =
SR.1 =
Start
Intel
0
0
0
0
1
®
Order Number: 290580, Revision: 020
Advanced Boot Block Flash Memory (B3)
0
1
1
1
1
Locked Block - Aborted
Command Sequence
No
Suspend Erase
Attempted Erase of
Block Erase Error
V
PP
Range Error
Error
Erase Loop
Suspend
Yes
Repeat for subsequent block erasures.
Full Status Check can be done after each block erase or after a sequence of
block erasures.
Write FFH after the last write operation to reset device to read array mode.
SR. 1 and 3 MUST be cleared, if set during an erase attempt, before further
attempts are allowed by the Write State Machine.
SR.1, 3, 4, 5 are only cleared by the Clear Staus Register Command, in cases
where multiple bytes are erased before full status is checked.
If an error is detected, clear the status register before attempting retry or other
error recovery.
Bus Operation
Bus Operation
Standby
Standby
Standby
Standby
Standby
Write
Write
Read
Erase Confirm
Erase Setup
Command
Command
Data = 20H
Addr = Within Block to Be
Erased
Data = D0H
Addr = Within Block to Be
Erased
Status Register Data Toggle
CE# or OE# to Update Status
Register Data
Check SR.7
1 = WSM Ready
0 = WSM Busy
Check SR.3
1 = V
Check SR.4,5
Both 1 = Command Sequence
Error
Check SR.5
1 = Block Erase Error
Check SR.1
1 = Attempted Erase of
Locked Block - Erase Aborted
PP
Low Detect
Comments
Comments
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