TE28F800B3T90 Intel, TE28F800B3T90 Datasheet - Page 11

• Manufacturer Part Number: TE28F800B3T90
• Manufacturer: Intel

Specifications of TE28F800B3T90

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 19b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 512K
• Supply Current: 18mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

3.2
3.2.1
3.2.2
3.2.3
Table 4.
Datasheet
(KW)
Size
4
4
4
4
Memory Maps and Block Organization
The B3 flash memory device uses an asymmetrically blocked architecture, enabling system
integration of code and data within a single flash memory device. Each block can be erased
independently of other blocks up to 100,000 times. For the address locations of each block, see the
following memory maps:
Parameter Blocks
The B3 flash memory device architecture includes parameter blocks to facilitate storing frequently
updated small parameters (such as data traditionally stored in an EEPROM). The word-rewrite
functionality of EEPROMs can be emulated using software techniques. Each flash memory device
contains eight parameter blocks of 8 Kbytes/4 Kwords (8192 bytes/4,096 words) each.
Main Blocks
After the parameter blocks, the remainder of the flash memory array is divided into equal-size main
blocks (65,536 bytes/32,768 words) for data or code storage.
4-Mbit, 8-Mbit, 16-Mbit, 32-Mbit, and 64-Mbit Word-Wide Memory Maps
16-Mbit and 32-Mbit Word-Wide Memory Addressing Map (Sheet 1 of 4)
•
•
•
•
•
•
•
•
•
Table 4 “16-Mbit and 32-Mbit Word-Wide Memory Addressing Map” on page 11
Table 5 “4-Mbit and 8-Mbit Word-Wide Memory Addressing Map” on page 14
Table 6 “16-Mbit, 32-Mbit, and 64-Mbit Word-Wide Memory Addressing Map” on page 15
Table 7 “8-Mbit and 16-Mbit Byte-Wide Memory Addressing Map” on page 20
Table 8 “4-Mbit Byte Wide Memory Addressing Map” on page 23
The 8-Mbit flash memory device contains 15 main blocks.
The 16-Mbit flash memory device contains 31 main blocks.
The 32-Mbit memory device contains 63 main blocks.
The 64-Mbit memory device contains 127 main blocks.
Top Boot
FD000-FDFFF
FC000-FCFFF
FE000-FEFFF
FF000-FFFFF
16 Mbit
Intel
16-Mbit and 32-Mbit Word-Wide Memory Addressing
®
Order Number: 290580, Revision: 020
Advanced Boot Block Flash Memory (B3)
1FD000-1FDFFF
1FC000-1FCFFF
1FF000-1FFFFF
1FE000-1FEFFF
32 Mbit
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
(KW)
Size
32
32
32
32
8 Mbit
Bottom Boot
16 Mbit
1F8000-1FFFFF
1F0000-1F7FFF
18 Aug 2005
1E8000-
1E0000-
1EFFFF
1E7FFF
32 Mbit
11