TE28F800B3T90 Intel, TE28F800B3T90 Datasheet - Page 34

• Manufacturer Part Number: TE28F800B3T90
• Manufacturer: Intel

Specifications of TE28F800B3T90

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 19b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 512K
• Supply Current: 18mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
7.0
7.1
Table 13.
18 Aug 2005
34
I
I
I
I
I
I
I
I
I
I
I
LI
LO
CCS
CCD
CCR
PPD
CCW
CCE
CCES
CCWS
PPR
Sym
/
Input Load Current
Output Leakage Current
V
V
V
V
V
V
V
Current
V
V
V
V
V
0.13 and 0.18 Micron
Product
0.25 Micron Product
for 0.13 and 0.18 Micron
Product
for 0.25 Product
0.13 and 0.18 Micron
Product
0.25 Micron Product
Current for 0.13 and 0.18
Micron Product
Current for 0.25 Micron
Product
CC
CC
CC
CC
CC
CC
PP
CC
CC
CC
CC
PP
Power-Down Current
Power-Down Current
Deep Power-Down
Read Current
Standby Current for
Standby Current for
Read Current for
Read Current for
Program Current
Erase Current
Erase Suspend
Erase Suspend
Electrical Specifications
DC Current Characteristics
DC Current Characteristics (Sheet 1 of 2)
Parameter
Intel
V
Note
1,2,3
1,2,3
1,4,5
®
V
Order Number: 290580, Revision: 020
1,2
1,2
1,2
1,2
1,4
1,4
1,4
CCQ
CC
1
1
1
Advanced Boot Block Flash Memory (B3)
2.7 V–3.6 V
2.7 V–3.6 V
Typ
0.2
10
10
18
16
10
50
7
7
7
9
8
8
7
2
Max
± 10
± 15
200
± 1
15
25
15
25
18
18
55
22
45
15
15
25
5
2.7 V–2.85 V
1.65 V–2.5 V
Typ
0.2
20
20
18
10
21
16
50
50
50
7
7
8
8
2
Max
± 10
200
200
± 15
200
± 1
50
50
20
25
15
15
55
30
45
45
5
2.7 V–3.3 V
1.8 V–2.5 V
Typ
150
150
0.2
18
10
21
16
50
50
50
7
7
9
9
2
Max
± 10
250
250
200
200
± 15
200
± 1
20
25
15
15
55
30
45
45
5
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
CE# = RP# = V
or during Program/ Erase
Suspend
WP# = V
V
V
V
RP# = GND ± 0.2 V
V
V
OE# = V
f = 5 MHz, I
Inputs = V
RP# = GND ± 0.2 V
V
V
Program in Progress
V
Program in Progress
V
Erase in Progress
V
Erase in Progress
CE# = V
Suspend in Progress
V
V
CC
CCQ
IN
CC
CCQ
IN
CC
CC
CCQ
IN
CC
CCQ
PP
PP
PP
PP
PP
PP
PP
= V
= V
= V
≤ V
= V
≤ V
> V
Test Conditions
=V
= V
= V
= V
= V
= V
= V
= V
= V
= V
= V
= V
CCQ
CCQ
CCQ
PP1,
CC
PP2 (12v)
CC
CC
PP1,
PP2 (12v) ,
CC
CC
CC
CC
CC
IH,
IH
CCQ
CCQ
CCQ
CCQ
CCQ
IL
, CE# =V
Max
Max
Max
Max
Max
Erase
OUT
or GND
or GND
or GND
or V
Max
Max
or GND
Max
Max
Datasheet
CCQ
=0 mA
IH
IL