TE28F800B3T90 Intel, TE28F800B3T90 Datasheet - Page 39

• Manufacturer Part Number: TE28F800B3T90
• Manufacturer: Intel

Specifications of TE28F800B3T90

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 19b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 512K
• Supply Current: 18mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

Table 17.
Datasheet
Notes:
1.
2.
3.
4.
R10
R1
R2
R3
R4
R5
R6
R7
R8
R9
#
t
t
t
t
t
t
t
t
t
Sym
GLQV
PHQV
GLQX
EHQZ
GHQZ
AVQV
ELQV
ELQX
AVAV
t
OE# can be delayed up to t
Sampled, but not 100% tested.
See
See
allowable input slew rate.
OH
Figure 10 “Read Operation Waveform” on page
Figure 12 “AC Input/Output Reference Waveform” on page 46
Read Cycle Time
Address to Output
Delay
CE# to Output
Delay
OE# to Output
Delay
RP# to Output
Delay
CE# to Output in
Low Z
OE# to Output in
Low Z
CE# to Output in
High Z
OE# to Output in
High Z
Output Hold from
Address, CE#, or
OE# Change,
Whichever
Occurs First
Param
eter
Read Operations—32-Mbit Density
Product
Density
V
CC
Intel
Min
ELQV–
2.7 V–3.6
70
0
0
0
70 ns
®
Order Number: 290580, Revision: 020
V
t
Max
Advanced Boot Block Flash Memory (B3)
150
GLQV
70
70
20
20
20
after the falling edge of CE# without impact on t
Min
2.7 V–3.6
90
0
0
0
90 ns
V
Max
150
90
90
20
20
20
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
40.
Min
3.0 V–3.3
90
0
0
0
V
Max
150
90
90
30
20
20
32 Mbit
100 ns
Min
100
2.7 V–3.3
for timing measurements and maximum
0
0
0
V
Max
100
100
150
30
20
20
Min
100
3.0 V–3.3
0
0
0
V
Max
100
100
150
30
20
20
ELQV
110 ns
.
Min
110
2.7 V–3.3
0
0
0
V
Max
150
110
110
30
20
20
18 Aug 2005
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1,3,4
1,3,4
2,3,4
2,3,4
2,3,4
2,3,4
2,3,4
3,4
3,4
3,4
39