BUK7608-55 NXP Semiconductors, BUK7608-55 Datasheet - Page 3

• Manufacturer Part Number: BUK7608-55
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BUK7608-55

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±16V
• Continuous Drain Current: 75A
• Power Dissipation: 187W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
AVALANCHE LIMITING VALUE
April 1998
TrenchMOS
Standard level FET
SYMBOL PARAMETER
W
DSS
ID% = 100 I
120
110
100
Fig.2. Normalised continuous drain current.
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
Drain-source non-repetitive
unclamped inductive turn-off
energy
20
PD% = 100 P
20
D
/I
40
40
D 25 ˚C
transistor
60
60
= f(T
80
80
Tmb / C
Tmb / C
D
mb
/P
); conditions: V
D 25 ˚C
Normalised Current Derating
100
100
Normalised Power Derating
120
120
= f(T
140
140
mb
)
160
160
GS
CONDITIONS
I
V
D
180
180
GS
5 V
= 75 A; V
= 10 V; R
3
DD
GS
25 V;
= 50 ; T
1E+00
I
1E-01
1E-02
1E-03
RDS(ON) = VDS/ID
D
& I
1000
Fig.3. Safe operating area. T
100
1E-07
10
Fig.4. Transient thermal impedance.
DM
1
Zth / (K/W)
1
0.05
0.02
mb
Z
= f(V
0.5
0.2
0.1
th j-mb
0
= 25 ˚C
DS
1E-05
= f(t); parameter D = t
); I
DM
DC
MIN.
single pulse; parameter t
10
-
1E-03
t / s
VDS / V
TYP.
P
D
-
Product specification
1E-01
BUK7608-55
mb
t
p
T
MAX.
= 25 ˚C
p
100
/T
500
tp = 10 us
100 us
1 ms
10 ms
100 ms
D =
BUKX508-55
T
t
Rev 1.000
p
t
1E+01
UNIT
mJ
p