BUK7608-55 NXP Semiconductors, BUK7608-55 Datasheet - Page 7

• Manufacturer Part Number: BUK7608-55
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BUK7608-55

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±16V
• Continuous Drain Current: 75A
• Power Dissipation: 187W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
MECHANICAL DATA
MOUNTING INSTRUCTIONS
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
2. Epoxy meets UL94 V0 at 1/8".
April 1998
TrenchMOS
Standard level FET
Dimensions in mm
Net Mass: 1.4 g
Dimensions in mm
damage to MOS gate oxide.
transistor
2.54 (x2)
Fig.18. SOT404 : centre pin connected to mounting base.
Fig.19. SOT404 : soldering pattern for surface mounting .
10.3 max
9.0
0.85 max
(x2)
3.8
7
11 max
2.0
11.5
5.08
15.4
4.5 max
1.4 max
17.5
0.5
Product specification
2.5
BUK7608-55
Rev 1.000