BUK7608-55 NXP Semiconductors, BUK7608-55 Datasheet - Page 5

• Manufacturer Part Number: BUK7608-55
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BUK7608-55

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±16V
• Continuous Drain Current: 75A
• Power Dissipation: 187W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
April 1998
TrenchMOS
Standard level FET
Fig.13. Typical turn-on gate-charge characteristics.
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
V
VGS/V
GS
Fig.12. Typical capacitances, C
7
6
5
4
3
2
1
0
0.01
I
C = f(V
D
12
10
0
8
6
4
2
0
= f(Q
= f(V
0
Fig.11. Sub-threshold drain current.
10
G
GS)
DS
); conditions: I
); conditions: V
; conditions: T
1
0.1
20
30
transistor
2%
40
2
1
D
50
VDS/V
VDS = 14V
QG/nC
= 50 A; parameter V
j
GS
= 25 ˚C; V
typ
= 0 V; f = 1 MHz
60
Sub-Threshold Conduction
3
70
10
iss
, C
98%
DS
VDS = 44V
80
oss
4
= V
, C
BUK7508-55
90
GS
100
rss
Coss
Crss
Ciss
100
.
DS
5
5
VGS
0
IF/A
I
Fig.15. Normalised avalanche energy rating.
100
F
80
60
40
20
120
110
100
0
= f(V
90
80
70
60
50
40
30
20
10
0
0
Fig.14. Typical reverse diode current.
Fig.16. Avalanche energy test circuit.
20
W
WDSS%
W
SDS
DSS
DSS
40
0.2
); conditions: V
% = f(T
RGS
0.5 LI
60
0.4
mb
80
); conditions: I
Tj/C =
D
2
BV
VSDS/V
Tmb / C
0.6
100
GS
DSS
175
L
= 0 V; parameter T
VDS
120
BV
T.U.T.
Product specification
0.8
DSS
BUK7608-55
140
D
shunt
= 75 A
R 01
V
25
DD
1
160
-
+
Rev 1.000
-ID/100
180
VDD
1.2
j