MT29F4G08ABBDAH4:D Micron Technology Inc, MT29F4G08ABBDAH4:D Datasheet - Page 104
MT29F4G08ABBDAH4:D
Manufacturer Part Number
MT29F4G08ABBDAH4:D
Description
MICMT29F4G08ABBDAH4:D 4G SLC NAND FLASH
Manufacturer
Micron Technology Inc
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Figure 77: TWO-PLANE INTERNAL DATA MOVE with RANDOM DATA INPUT
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. J 9/11 EN
R/B#
R/B#
I/Ox
I/Ox
1
t DBSY
00h
Address (5 cycles)
1st-plane source
85h
2nd-plane destination
Address (5 cycles)
00h
Address (5 cycles)
2nd-plane source
Optional
Data
85h
Address (2 cycles)
Unlimited number
35h
of repetitions
t R
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
104
85h
1st-plane destination
Data
Address (5 cycles)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
10h
t PROG
Optional
Data
85h
70h
Address (2 cycles)
Unlimited number
Two-Plane Operations
of repetitions
Status
© 2009 Micron Technology, Inc. All rights reserved.
Data
11h
1
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