MT29F4G08ABBDAH4:D Micron Technology Inc, MT29F4G08ABBDAH4:D Datasheet - Page 130

• Manufacturer Part Number: MT29F4G08ABBDAH4:D
• Description: MICMT29F4G08ABBDAH4:D 4G SLC NAND FLASH
• Manufacturer: Micron Technology Inc

Figure 99: INTERNAL DATA MOVE (85h-10h) with Random Data Input with Internal ECC Enabled
Figure 100: ERASE BLOCK Operation
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. J 9/11 EN
I/O[7:0]
I/O[7:0]
R/B#
WE#
RDY
CLE
ALE
CE#
RE#
00h
Source address
(5 cycles)
Address
t
WC
60h
add 1
35h
Row
Row address
t
R_ECC
add 2
Row
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
70h
add 3
Row
Status
00h
D0h
t
WB
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
D
D
OUT
OUT
130
Busy
t
BERS
Asynchronous Interface Timing Diagrams
is optional
85h
Destination address
Micron Technology, Inc. reserves the right to change products or specifications without notice.
(5 cycles)
READ STATUS
Address
command
70h
Data
(Unlimitted repetitions are possible)
t
WHR
85h
Column address 1, 2
I/O0 = 0, Pass
I/O0 = 1, Fail
(2 cycles)
Address
Status
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Data
10h
t
PROG_ECC
Don’t Care
70h