ATTINY861A-XU Atmel, ATTINY861A-XU Datasheet - Page 19
![Microcontrollers (MCU) 8K Flash;125B EEPROM 128B SRAM;16 IO Pins](/photos/39/70/397036/tssop20_sml.jpg)
ATTINY861A-XU
Manufacturer Part Number
ATTINY861A-XU
Description
Microcontrollers (MCU) 8K Flash;125B EEPROM 128B SRAM;16 IO Pins
Manufacturer
Atmel
Datasheet
1.ATTINY861A-XU.pdf
(292 pages)
Specifications of ATTINY861A-XU
Core
RISC
Data Bus Width
8 bit
Program Memory Type
Flash
Program Memory Size
8 KB
Data Ram Size
512 B
Interface Type
SPI
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
16
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-20
Minimum Operating Temperature
- 40 C
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATTINY861A-XUR
Manufacturer:
IDT
Quantity:
1 300
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5.3.7
8197B–AVR–01/10
Preventing EEPROM Corruption
The next code examples show assembly and C functions for reading the EEPROM. The exam-
ples assume that interrupts are controlled so that no interrupts will occur during execution of
these functions.
Note:
During periods of low V
too low for the CPU and the EEPROM to operate properly. These issues are the same as for
board level systems using EEPROM, and the same design solutions should be applied.
An EEPROM data corruption can be caused by two situations when the voltage is too low. First,
a regular write sequence to the EEPROM requires a minimum voltage to operate correctly. Sec-
ondly, the CPU itself can execute instructions incorrectly, if the supply voltage is too low.
EEPROM data corruption can easily be avoided by following this design recommendation:
Keep the AVR RESET active (low) during periods of insufficient power supply voltage. This can
be done by enabling the internal Brown-out Detector (BOD). If the detection level of the internal
BOD does not match the needed detection level, an external low V
Assembly Code Example
C Code Example
EEPROM_read:
unsigned char EEPROM_read(unsigned char ucAddress)
{
}
; Wait for completion of previous write
sbic EECR,EEPE
rjmp EEPROM_read
; Set up address (r18:r17) in address register
out EEARH, r18
out EEARL, r17
; Start eeprom read by writing EERE
sbi EECR,EERE
; Read data from data register
in
ret
/* Wait for completion of previous write */
while(EECR & (1<<EEPE))
/* Set up address register */
EEAR = ucAddress;
/* Start eeprom read by writing EERE */
EECR |= (1<<EERE);
/* Return data from data register */
return EEDR;
See
;
“Code Examples” on page
r16,EEDR
CC
, the EEPROM data can be corrupted because the supply voltage is
6.
CC
reset protection circuit can
19
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