HD6473837FV Renesas Electronics America, HD6473837FV Datasheet - Page 144

• Manufacturer Part Number: HD6473837FV
• Description: IC H8/3837 MCU FLASH 100QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Lr

Specifications of HD6473837FV

• Core Processor: H8/300L
• Core Size: 8-Bit
• Speed: 5MHz
• Connectivity: SCI
• Peripherals: LCD, PWM
• Number Of I /o: 84
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: OTP
• Eeprom Size: -
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 12x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-BQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

6.6
Reliability of Programmed Data
A highly effective way of assuring data retention characteristics after programming is to screen the
chips by baking them at a temperature of 150°C. High-temperature baking is a screening method
that quickly eliminates PROM memory cells prone to initial data retention failure.
Figure 6.10 shows a flowchart of this screening procedure.
Write program and verify contents
Bake at high temperature with power off
125 C to 150 C, 24 hrs to 48 hrs
Read and check program
Install
Figure 6.10 Recommended Screening Procedure
If write errors occur repeatedly while the same PROM programmer is being used, stop
programming and check for problems in the PROM programmer and socket adapter, etc.
Please notify your Hitachi representative of any problems occurring during programming or in
screening after high-temperature baking.
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