FB180SA1 Vishay Semiconductors, FB180SA1 Datasheet - Page 2

• Manufacturer Part Number: FB180SA1
• Manufacturer: Vishay Semiconductors

FB180SA10P
Vishay High Power Products
Note
(1)
Notes
(1)
(2)
www.vishay.com
2
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
Static drain to source on-resistance
Gate threshold voltage
Forward transconductance
Drain to source leakage current
Gate to source forward leakage
Total gate charge
Gate to source charge
Gate to drain ("Miller") charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Internal source inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
THERMAL RESISTANCE
PARAMETER
Junction to case
Case to sink, flat, greased surface
ELECTRICAL CHARACTERISTICS (T
PARAMETER
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER
Continuous source current
(body diode)
Pulsed source current (body diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Forward turn-on time
Pulse width ≤ 300 µs, duty cycle ≤ 2 %
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Pulse width ≤ 300 µs, duty cycle ≤ 2 %
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SYMBOL
V
I
ΔV
SM
t
SD
rr
Q
t
SYMBOL
I
on
SYMBOL
R
S
V(
(2)
(BR)DSS
rr
(1)
V
(2)
DS(on)
R
R
t
t
BR)DSS
I
I
C
C
GS(th)
Q
Q
C
d(on)
d(off)
DSS
GSS
g
Q
L
θCS
θJC
t
t
oss
iss
rss
fs
gd
gs
r
f
S
g
Power MOSFET, 180 A
/ΔT
(1)
J
= 25 °C unless otherwise noted)
MOSFET symbol
showing the integral reverse
p-n junction diode.
T
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
J
J
= 25 °C, I
= 25 °C, I
V
Reference to 25 °C, I
V
V
V
V
V
V
V
Between lead, and center of die contact
V
V
ƒ = 1.0 MHz, see fig. 5
I
V
V
V
I
R
R
D
D
HEXFET
GS
GS
DS
DS
DS
DS
GS
GS
GS
DS
DS
GS
DD
G
D
= 180 A
= 180 A
= 2.0 Ω (internal)
= 0.27 Ω, see fig. 10
= V
= 25 V, I
= 100 V, V
= 80 V, V
= 25 V
= 0 V, I
= 10 V, I
= 20 V
= - 20 V
= 0 V
= 80 V
= 10.0 V; see fig. 6 and 13
= 50 V
TEST CONDITIONS
GS
S
TEST CONDITIONS
F
= 180 A, V
, I
= 180 A; dI/dt = 100 A/µs
TYP.
0.05
D
D
D
D
-
= 250 µA
GS
= 250 µA
®
= 180 A
= 180 A
GS
= 0 V, T
= 0 V
GS
D
= 1 mA
= 0 V
J
(1)
= 125 °C
G
(1)
S
D
MAX.
0.26
-
MIN.
MIN.
100
2.0
93
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.0065
10 700
TYP.
TYP.
0.093
2800
1300
300
Document Number: 94541
2.6
250
110
351
181
335
5.0
40
45
-
-
-
-
-
-
-
-
-
-
S
+ L
Revision: 31-Jul-08
D
)
MAX.
MAX.
- 200
180
720
450
1.3
3.9
500
200
380
165
4.0
50
60
UNITS
-
-
-
-
-
-
-
-
-
-
-
-
°C/W
UNITS
UNITS
V/°C
µC
ns
µA
nA
nC
nH
pF
ns
A
V
Ω
V
V
S