FB180SA1 Vishay Semiconductors, FB180SA1 Datasheet - Page 3

• Manufacturer Part Number: FB180SA1
• Manufacturer: Vishay Semiconductors

Document Number: 94541
Revision: 31-Jul-08
1000
1000
1000
100
100
10
100
10
10
1
1
0.1
1
0.1
4
Fig. 3 - Typical Transfer Characteristics
TOP
BOTTOM
Fig. 2 - Typical Output Characteristics
Fig. 1 - Typical Output Characteristics
TOP
BOTTOM
T = 150 C
V
J
V
V
DS
5
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T = 25 C
, Gate-to-Source Voltage (V)
J
°
6
1
1
°
4.5V
7
4.5V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
20μs PULSE WIDTH
T = 150 C
J
DS
J
For technical questions, contact: [e-mail]
10
8
10
= 25V
°
°
9
Power MOSFET, 180 A
100
10
100
HEXFET
®
Fig. 4 - Normalized On-Resistance vs. Temperature
20000
15000
10000
5000
20
15
10
2.5
2.0
1.5
1.0
0.5
0.0
5
0
0
0
-60 -40 -20
1
I =
Vishay High Power Products
D
I =
D
Fig. 6 - Typical Gate Charge vs.
50
180 A
Fig. 5 - Typical Capacitance vs.
180A
V
Q , Total Gate Charge (nC)
DS
T , Junction Temperature( C)
Gate to Source Voltage
Drain to Source Voltage
100
C
C
G
J
C
V
C
C
C
oss
rss
, Drain-to-Source Voltage (V)
iss
GS
iss
rss
oss
0
150
=
=
=
=
20
0V,
C
C
C
gs
gd
ds
40
200
+ C
+ C
10
V
V
V
DS
DS
DS
60
f = 1MHz
FOR TEST CIRCUIT
gd ,
gd
FB180SA10P
SEE FIGURE
250
= 80V
= 50V
= 20V
80 100 120 140 160
C
ds
300
SHORTED
V
°
GS
350
www.vishay.com
=
13
10V
400
100
3