FB180SA1 Vishay Semiconductors, FB180SA1 Datasheet - Page 6

• Manufacturer Part Number: FB180SA1
• Manufacturer: Vishay Semiconductors

FB180SA10P
Vishay High Power Products
www.vishay.com
6
Re-Applied
Voltage
Reverse
Recovery
Current
1
For technical questions, contact: [e-mail]
+
2
-
R
Fig. 13c - Peak Diode Recovery dV/dt Test Circuit
D.U.T.
G
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig. 14 - For N-Channel HEXFET
V
GS
12 V
Fig. 13b - Gate Charge Test Circuit
= 5V for Logic Level Devices
P.W.
SD
Power MOSFET, 180 A
DS
V
GS
Waveform
Waveform
Same type as D.U.T.
Current regulator
.2 µF
Ripple ≤ 5%
Body Diode
Period
3
Body Diode Forward
+
-
HEXFET
3 mA
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - Device under test
50 KΩ
Current sampling resistors
SD
Diode Recovery
.3 µF
controlled by duty factor "D"
Current
Circuit layout considerations
I
G
• Low stray inductance
• Ground plane
• Low leakage inductance
dv/dt
Forward Drop
current transformer
di/dt
®
D.U.T.
-
I
D
G
®
D =
Power MOSFETs
4
+
Period
-
P.W.
V
+
DS
V
V
I
SD
GS
DD
+
-
=10V
V
DD
*
Document Number: 94541
Revision: 31-Jul-08