FB180SA1 Vishay Semiconductors, FB180SA1 Datasheet - Page 4

• Manufacturer Part Number: FB180SA1
• Manufacturer: Vishay Semiconductors

FB180SA10P
Vishay High Power Products
www.vishay.com
4
Fig. 7 - Typical Source Drain Diode Forward Voltage
10000
1000
1000
100
100
0.1
10
10
1
1
0.2
1
Fig. 8 - Maximum Safe Operating Area
T
T
Single Pulse
C
J
T = 150 C
= 25 C
= 150 C
J
OPERATION IN THIS AREA LIMITED
V
V
DS
SD
°
°
0.6
, Drain-to-Source Voltage (V)
°
,Source-to-Drain Voltage (V)
10
T = 25 C
BY R
J
1.0
DS(on)
°
100
For technical questions, contact: [e-mail]
10us
100us
1ms
10ms
1.4
V
GS
V
90%
10%
V
DS
GS
= 0 V
Fig. 10b - Switching Time Waveforms
Power MOSFET, 180 A
1000
1.8
t
d(on)
HEXFET
t
r
®
t
d(off)
t
f
200
175
150
125
100
75
50
25
Fig. 10a - Switching Time Test Circuit
0
R
25
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
Fig. 9 - Maximum Drain Current vs.
V
GS
50
V
T , Case Temperature ( C)
DS
C
Case Temperature
75
D.U.T.
R
100
Document Number: 94541
D
Revision: 31-Jul-08
125
°
+
-
V
DD
150