FB180SA1 Vishay Semiconductors, FB180SA1 Datasheet - Page 5

• Manufacturer Part Number: FB180SA1
• Manufacturer: Vishay Semiconductors

Document Number: 94541
Revision: 31-Jul-08
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
I
A S
20 V
R
G
V
DS
0.001
t
0.01
p
0.1
0.00001
1
I
D = 0.50
AS
D.U.T
0.20
0.10
0.05
0.02
0.01
0.01 Ω
L
t p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case
V
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15 V
(B R )D S S
(THERMAL RESPONSE)
0.0001
Driver
SINGLE PULSE
+
-
Power MOSFET, 180 A
V
DD
t , Rectangular Pulse Duration (sec)
A
1
HEXFET
0.001
®
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
1. Duty factor D = t / t
2. Peak T = P
1500
1200
Notes:
900
600
300
10 V
0
25
V
J
Vishay High Power Products
Fig. 13a - Basic Gate Charge Waveform
G
0.01
Starting T , Junction Temperature( C)
DM
Q
x Z
50
GS
1
thJC
P
2
J
DM
+ T
C
t
75
1
Charge
Q
Q
GD
G
t
2
100
FB180SA10P
0.1
TOP
BOTTOM
125
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100A
160A
°
I D
71A
150
5