ATmega16HVB Atmel Corporation, ATmega16HVB Datasheet - Page 211

• Manufacturer Part Number: ATmega16HVB
• Manufacturer: Atmel Corporation

Specifications of ATmega16HVB

• Flash (kbytes): 16 Kbytes
• Pin Count: 44
• Max. Operating Frequency: 8 MHz
• Cpu: 8-bit AVR
• # Of Touch Channels: 8
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 17
• Ext Interrupts: 15
• Usb Speed: No
• Usb Interface: No
• Spi: 1
• Twi (i2c): 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 8
• Adc Resolution (bits): 12
• Adc Speed (ksps): 1.9
• Resistive Touch Screen: No
• Temp. Sensor: Yes
• Crypto Engine: No
• Sram (kbytes): 1
• Eeprom (bytes): 512
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 4.0 to 25
• Operating Voltage (vcc): 4.0 to 25
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 2
• Output Compare Channels: 4
• Input Capture Channels: 2
• 32khz Rtc: No
• Calibrated Rc Oscillator: Yes

Figure 30-2. Serial programming instruction example.
30.7
30.7.1
8042D–AVR–10/11
Byte 1
Parallel programming
Considerations for efficient programming
Load Program Memory Page (High/Low Byte)/
Load EEPROM Memory Page (page access)
Bit 15 B
Byte 2
Adr M M S S B
A
If the LSB in RDY/BSY data byte out is ‘1’, a programming operation is still pending. Wait until
this bit returns ‘0’ before the next instruction is carried out.
Within the same page, the low data byte must be loaded prior to the high data byte.
After data is loaded to the page buffer, program the EEPROM page, see
This section describes parameters, pin mapping, and commands used to parallel program and
verify Flash Program memory, EEPROM Data memory, Memory Lock bits, and Fuse bits in the
Atmel ATmega16HVB/32HVB. Pulses are assumed to be at least 250 ns unless otherwise
noted.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
• The command needs only be loaded once when writing or reading multiple memory locations
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
Address high byte needs only be loaded before programming or reading a new 256 word window
in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes reading.
EESAVE Fuse is programmed) and Flash after a Chip Erase
Byte 3
Adr LSB
Page Offset
0
Serial Programming Instruction
Byte 4
Program Memory/
EEPROM Memory
Page Buffer
Page N-1
Page 0
Page 1
Page 2
Byte 1
Page Number
Bit 15 B
ATmega16HVB/32HVB
Byte 2
Write Program Memory Page/
Write EEPROM Memory Page
Adr MSB
Byte 3
A A dr r L L SB B
Figure
0
30-2.
Byte 4
211