ATmega649 Atmel Corporation, ATmega649 Datasheet - Page 299
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ATmega649
Manufacturer Part Number
ATmega649
Description
Manufacturer
Atmel Corporation
Specifications of ATmega649
Flash (kbytes)
64 Kbytes
Pin Count
64
Max. Operating Frequency
16 MHz
Cpu
8-bit AVR
# Of Touch Channels
16
Hardware Qtouch Acquisition
No
Max I/o Pins
54
Ext Interrupts
17
Usb Speed
No
Usb Interface
No
Spi
2
Twi (i2c)
1
Uart
1
Segment Lcd
100
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
8
Adc Resolution (bits)
10
Adc Speed (ksps)
15
Analog Comparators
1
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
4
Eeprom (bytes)
2048
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8 to 5.5
Operating Voltage (vcc)
1.8 to 5.5
Fpu
No
Mpu / Mmu
no / no
Timers
3
Output Compare Channels
4
Input Capture Channels
1
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATmega649-16AU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Company:
Part Number:
ATmega649-16MU
Manufacturer:
Atmel
Quantity:
135
Part Number:
ATmega6490-16AI
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Company:
Part Number:
ATmega6490-16AU
Manufacturer:
Atmel
Quantity:
135
Company:
Part Number:
ATmega6490-16AUR
Manufacturer:
Atmel
Quantity:
1 500
Company:
Part Number:
ATmega6490A-AU
Manufacturer:
Atmel
Quantity:
1 250
Company:
Part Number:
ATmega6490A-AUR
Manufacturer:
Maxim
Quantity:
43
27.6
27.6.1
27.6.2
27.6.3
2552K–AVR–04/11
Parallel Programming
Enter Programming Mode
Considerations for Efficient Programming
Chip Erase
The following algorithm puts the device in Parallel (High-voltage) Programming mode:
1. Set Prog_enable pins listed in
2. Apply 4.5 - 5.5V between V
3. Ensure that V
4. Wait 20 - 60 µs, and apply 11.5 - 12.5V to RESET.
5. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been
6. Wait at least 300 µs before giving any parallel programming commands.
7. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
If the rise time of the V
tive algorithm can be used.
1. Set Prog_enable pins listed in
2. Apply 4.5 - 5.5V between V
3. Monitor V
4. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been
5. Wait until V
6. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
•
•
•
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
0V.
applied to ensure the Prog_enable Signature has been latched.
V
applied to ensure the Prog_enable Signature has been latched.
commands.
The command needs only be loaded once when writing or reading multiple memory
locations.
Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
EESAVE Fuse is programmed) and Flash after a Chip Erase.
Address high byte needs only be loaded before programming or reading a new 256 word
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
CC
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
to 0V.
CC
, and as soon as V
CC
CC
reaches at least 1.8V within the next 20 µs.
actually reaches 4.5 -5.5V before giving any parallel programming
CC
is unable to fulfill the requirements listed above, the following alterna-
CC
CC
and GND.
and GND.
Table 27-7 on page 297
CC
Table 27-7 on page 297
reaches 0.9 - 1.1V, apply 11.5 - 12.5V to RESET.
ATmega329/3290/649/6490
(1)
memories plus Lock bits. The Lock bits are
to “0000”, RESET pin and V
to “0000”, RESET pin to 0V and
CC
to
299